ON5088,115 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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ON5088
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حجم فایل
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70.148
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
NXP Semicon ON5088,115
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Transistor Type:
NPN
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Collector Current (Ic):
40mA
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Power Dissipation (Pd):
136mW
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Transition Frequency (fT):
55GHz
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DC Current Gain (hFE@Ic,Vce):
160@10mA,2V
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Collector-Emitter Breakdown Voltage (Vceo):
10V
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Package:
-
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Manufacturer:
NXP Semicon
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
10V
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Frequency - Transition:
55GHz
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Noise Figure (dB Typ @ f):
1.1dB @ 12GHz
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Gain:
13dB
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Power - Max:
136mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 10mA, 2V
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Current - Collector (Ic) (Max):
40mA
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
SOT-343F
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Supplier Device Package:
4-DFP
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Base Part Number:
ON50
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detail:
RF Transistor NPN 10V 40mA 55GHz 136mW Surface Mount 4-DFP
